Автор туралы ақпарат

Масальский, Н. В.

Шығарылым	Бөлім	Атауы	Файл
Том 53, № 3 (2024)	МОДЕЛИРОВАНИЕ	Simulation of silicon conical field effect GAA nanotransistors with stack SiO2/HfO2 dielectric of gate
Том 52, № 5 (2023)	ПРИБОРЫ	Influence of Hot Carrier Degradation on the Characteristics of a High-Voltage SOI Transistor with a Large Drift Region
Том 52, № 4 (2023)	МОДЕЛИРОВАНИЕ	Simulation of Silicon FETs with a Fully Enclosed Gate with a High-k Gate Dielectric
Том 53, № 5 (2024)	ПРИБОРЫ	Temperature dependences of the breakdown voltage of a high-voltage LDMOS transistor