Enviar artigo por via de e-mail The effect of laser radiation on a junction field-effect transistor
- Autores: Rekhviashvili S.S.1, Gaev D.S.2, Litvinov А.B.1
-
Afiliações:
- KBSC RAS
- Kabardino-Balkarian State University named after Kh.M. Berbekov
- Edição: Volume 70, Nº 1 (2025)
- Páginas: 82-87
- Seção: ФИЗИЧЕСКИЕ ПРОЦЕССЫ В ЭЛЕКТРОННЫХ ПРИБОРАХ
- URL: https://medjrf.com/0033-8494/article/view/684124
- DOI: https://doi.org/10.31857/S0033849425010092
- EDN: https://elibrary.ru/HIWTEB
- ID: 684124
Citar
Acesso aberto
Acesso está concedido
Somente assinantes
Resumo
Experimental and theoretical studies of the effect of modulated laser radiation on the functioning of a junction field-effect transistor (JFET) as part of an amplifier stage with a common source have been carried out. Patterns in changes in transistor parameters depending on external radiation are determined. It has been established that the cut-off voltage and the specific steepness of the shutter undergo the greatest changes during laser irradiation. It was found that when the transistor structure is irradiated, a photovoltaic effect occurs at the p-n junction of the gate, the concentration of free charge carriers in the semiconductor regions and the channel resistance change. It is shown that the device is sufficiently resistant to laser radiation, which is crucial for creating radiation-resistant integrated circuits.
Sobre autores
S. Rekhviashvili
KBSC RAS
Autor responsável pela correspondência
Email: rsergo@mail.ru
Institute of Applied Mathematics and Automation
Rússia, 89A Shortanova St., Nalchik, 360000D. Gaev
Kabardino-Balkarian State University named after Kh.M. Berbekov
Email: rsergo@mail.ru
Rússia, 173 Chernyshevsky St., Nalchik, 360004
А. Litvinov
KBSC RAS
Email: rsergo@mail.ru
Institute of Applied Mathematics and Automation
Rússia, 89A Shortanova St., Nalchik, 360000Bibliografia
- Sze S.M., Ng Kwok K. Physics of Semiconductor Devices. Hoboken: John Wiley & Sons, Inc., 2006.
- Citterio M., Kierstead J., Rescia S., Radeka V. // IEEE Trans. 1996. V.NS-43. № 3. P. 1576.
- Кильметов Р.С., Кухаренко А.П., Механцев Б.Е., Механцев Е.Б. // Известия ТРТУ. 2000. № 3(17). С. 167.
- Дворников О.В., Дятлов В.Л., Прокопенко Н.Н., Чеховский В.А. // РЭ. 2017. Т. 62. № 10. С. 1031.
- Prokopenko N.N., Pakhomov I.V., Zhuk A.A. // IOP Conf. Ser.: Mater. Sci. Eng. 2020. V. 862. № 3. Article No. 032109.
- Vikulin I.M., Vikulina L.F., Gorbachev V.E., Mikhailov N.S. // Radioelectronics and Commun. Systems. 2021. V. 64. № 6. P. 310.
- Takeyama A., Makino T., Tanaka Y. et al. // Quantum Beam Sci. 2023. V. 7. № 4. P. 31.
- Рехвиашвили С.Ш., Нарожнов В.В. Способ повышения быстродействия транзисторов и транзисторных интегральных схем. Патент РФ № 2799113. Опубл. офиц. бюл. «Изобретения. Полезные модели» № 19 от 04.07.2023.
- Альтудов Ю.К., Гаев Д.С., Псху А.В., Рехвиашвили С.Ш. // Микроэлектроника. 2023. T. 52. № 6. С. 489.
- Володин В.Я. LTspice: компьютерное моделирование электронных схем. СПб.: БХВ-Петербург, 2010.
- Разевиг В.Д. Применение программ P-CAD и PSpice для схемотехнического моделирования на ПЭВМ. Выпуск 2. М.: Радио и связь, 1992.
- Shichman H., Hodges D.A. // IEEE J. Solid-State Circuits. 1968. V. 3. № 3. P. 285.
- Antognetti P., Massobrio G. Semiconductor Device Modeling with Spice. N. Y.: McGraw-Hill, Inc., 1993.
- Дворников О., Шульгевич Ю. // Современная электроника. 2009. № 8. С. 50.
- Goncalves D., Fernandes L.M., Louro P. et al. // Proc. 4th Doctoral Conf. on Computing, Electrical and Industrial Systems (DoCEIS), 15–17 Apr. 2013. Costa de Caparica. Heidelberg: Springer, 2013. P. 547.
- Мармур И.Я., Новиков Ю.Б., Оксман Я.А. // ФТП. 1988. Т. 22. № 1. С. 87.
- Kavangary A., Graf P., Azazoglu H. et al. // AIP Advances. 2019. V. 9. № 2. Article No. 025104.
Arquivos suplementares
