Silicon surface modification with low-energy broad ion beam

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Abstract

Broad ion beam etching by Ar⁺ with low energy up to 1000 eV has been utilized to modify physicochemical properties of the monocrystalline Silicon (100) surface. The silicon surface modification results in etching delay time during its vacuum-plasma etching in a SF₆/O₂/Ar mixture. The etching delay time of the modified Silicon has been found to be significantly affected by conditions of preliminary silicon treatment with the ion beam such as the ion energy and the ion incidence angle. The enhancement in the etching delay time has been detected while lower ion energy and higher ion incidence angle are applied. The combination of the ion beam etching and the vacuum plasma etching could be concerned as the suitable way to form silicon structures.

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About the authors

L. M. Kolchina

Institute of Nanotechnology of Microelectronics of the Russian Academy of Sciences

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Email: Ludmila.Kolchina@yandex.ru
Russian Federation, Moscow

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2. Fig. 1. The effect of the energy of Ar⁺ ions during preliminary ion-beam treatment of silicon targets at an ion incidence angle of 88° (a), 75° (b), 0° (c) relative to the normal to the target surface on the delay time of subsequent etching of silicon in SF₆/O₂/Ar plasma.

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3. Fig. 2. Surface profile of a silicon target obtained using optical profilometry after using a combination of the ITL and VPT methods: a – Ar⁺ beam with an energy of 400 eV at an incidence angle of 88° followed by VPT, b – Ar⁺ beam with an energy of 600 eV at an incidence angle of 75° followed by VPT.

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