Elastic conductivity of germanene nanoribbons with acceptor defects

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Дәйексөз келтіру

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Аннотация

This work is devoted to the theoretical researchers of the germanene nanoribbons piezoresistivity of various structural modifications (arm-chair and zig-zag) with the acceptor structural defects. Gallium atoms were chosen as impurities. A phenomenological expression for the band structure of nanoribbons deformed by tension and compression is proposed. The dependences of the longitudinal component of the elastic conductivity tensor on the relative deformation of tension and compression, the concentration of impurities and the width of the nanoribbon are analyzed.

Толық мәтін

Рұқсат жабық

Авторлар туралы

O. Lebedeva

Volgograd State University

Хат алмасуға жауапты Автор.
Email: lebedeva_os@volsu.ru
Ресей, Volgograd

N. Lebedev

Volgograd State University

Email: lebedeva_os@volsu.ru
Ресей, Volgograd

A. Chibrikov

Volgograd State University

Email: lebedeva_os@volsu.ru
Ресей, Volgograd

E. Shamina

Volgograd State Medical University

Email: lebedeva_os@volsu.ru
Ресей, Volgograd

Әдебиет тізімі

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2. Fig. 1. Fragment of the structure of armchair germanene nanoribbon deformed by longitudinal stretching: Δi (i = 1, 2, 3) – vectors of interatomic distances; a1, a2 – vectors of the main translations; α – angle between vectors a1 and a2

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3. Fig. 2. Band structure of p-conducting 17-AGeNR (a, b) and p-semiconductor 18-AGeNR (c, d): a, c – δ = 0, Nd = 1000; b, d – δ = 0.04, Nd = 1000. The Fermi level is shown by dotted lines.

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4. Fig. 3. Dependences of the longitudinal component M of the elastic conductivity tensor of 17-AGeNR (a) and 18-AGeNR (b, c) chairlifts on the strain δ at different defect concentrations Nd: a – 1 (1), 10 (2), 100 (3), 1000 (4), 10000 (5); b – 0 (1), 1 (2), 10 (3); c – 100 (1), 1000 (2), 10000 (3).

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5. Fig. 4. Dependencies similar to those shown in Fig. 2, but for 100-AGeNRs (a) and 200-AGeNRs (b) at different concentrations of Nd defects: 1 (1), 10 (2), 100 (3), 1000 (4), 10000 (5).

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6. Fig. 5. Dependences of the longitudinal component M of the elastic conductivity tensor of zigzag 17-ZGeNRs (a) and 18-ZGeNRs (b) on the value of relative deformation δ at different defect concentrations Nd: 1 (1), 10 (2), 100 (3), 1000 (4), 10,000 (5).

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7. Fig. 6. Changes in the chemical potential ∆µ of conducting 17-AGeNRs (a) and semiconducting 18-AGeNRs (b) on the value of relative deformation δ at different defect concentrations Nd: 1 (1), 10 (2), 100 (3), 1000 (4), 10000 (5).

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