Manganese Silicide-Germanides Anodic Behavior in Sodium Sulfate Aqueous Solution: Influence of Germanium Content

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The anodic electrochemical behavior of manganese silicide-germanides with different ratios of germanium and silicon was studied using voltammetry and impedance spectroscopy methods in a 0.5 M sodium sulfate aqueous solution. It has been shown that the resistance of materials to oxidation decreases with increasing proportion of germanium, which, unlike silicon, is not capable of forming a layer of stable oxides on the surface of the material.

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Sobre autores

I. Rakityanskaya

Perm State National Research University

Autor responsável pela correspondência
Email: irisa@yandex.ru
Rússia, Perm

D. Myasnikov

Perm State National Research University

Email: mda@psu.ru
Rússia, Perm

Bibliografia

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2. Fig. 1. Diffractograms for silicide-germanides Mn5Si3-0.60Ge0.60 (a), Mn5Si3-2.40Ge2.40 (b) and Mn5Si3-2.85Ge2.85 (c)

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3. Fig. 2. Polarisation curves for Mn5Ge3 (1), Mn5Si3-2.85Ge2.85 (2), Mn5Si3-2.40Ge2.40 (3), Mn5Si3-0.60Ge0.60 (4) in 0.5 M Na2SO4 solution, potential change rate 1 mV/s. On the inset - polarisation curve of Mn5Si3 (5) under similar conditions

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4. Fig. 3. Nyquist plots for Mn5Si3-0.60Ge0.60 at anodic polarisation in 0.5 M Na2SO4 solution at potentials E, V: - 0.1 (1), 0.0 (2), 0.1 (3), 0.2 (4), 0.3 (5), 0.4 (6), 0.5 (7), 0.6 (8), 0.7 (9), 0.8 (10), 0.9 (11), 1.0 (12)

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5. Fig. 4. General equivalent scheme for anodic dissolution of samples

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6. Fig. 5. Equivalent schemes for impedance hodographs of Mn5Si3-0.60Ge0.60 in the potential range E = 0.4 V (a) and E = 0.5 - 1.0 V (b)

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7. Fig. 6. Nyquist plots for Mn5Si3-2.40Ge2.40 at anodic polarisation in 0.5 M Na2SO4 solution at potentials E, V: - 0.1 (1), 0.0 (2), 0.1 (3), 0.2 (4), 0.3 (5), 0.4 (6), 0.5 (7), 0.6 (8), 0.7 (9), 0.8 (10), 0.9 (11), 1.0 (12)

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8. Fig. 7. Equivalent scheme for Mn5Si3-2.40Ge2.40 hodographs in the potential range E = 0.4 - 0.8 V

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9. Fig. 8. Nyquist plots for Mn5Si3-2.85Ge2.85 at anodic polarisation in 0.5 M Na2SO4 solution at potentials E, V: - 0.1 (1), 0.0 (2), 0.1 (3), 0.2 (4), 0.3 (5), 0.4 (6), 0.5 (7), 0.6 (8), 0.7 (9), 0.8 (10), 0.9 (11), 1.0 (12)

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10. Fig. 9. Equivalent scheme for Mn5Si3-2.85Ge2.85 hodographs in the potential range E = 0.4 - 0.8 V

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11. Fig. 10. Dependence of charge transfer resistance (Rct) (a) and DEC capacitance (Cdl) (b) on potential for Mn5Si3-0.60Ge0.60 (1), Mn5Si3-2.40Ge2.40 (2) and Mn5Si3-2.85Ge2.85 (3)

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12. Fig. 11. Potential dependence of the parameter p for Mn5Si3-0.60Ge0.60 (1), Mn5Si3-2.40Ge2.40 (2) and Mn5Si3-2.85Ge2.85 (3)

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