Electron cyclotron resonance plasma studies using the second cyclotron harmonic resonance

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Resumo

Microwave plasma (generation frequency 2.45 GHz, power 200–1000 W, pressure 0.2–10 mTorr) is excited and maintained in two main modes: (1) at continuous microwave power and low magnetic fields (B = 300–450 G) under a superdense (Ne > Ncr = 7.4 ´ 1010 cm−3) plasma and low plasma density (Ne < Ncr); and (2) in high magnetic fields (B = 750–1000 G), close to the ECR condition. The peculiarities of plasma generation under the ECR condition and at the second harmonic of cyclotron resonance are studied.

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Sobre autores

А. Kovalchuk

Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences

Autor responsável pela correspondência
Email: anatoly-fizmat@mail.ru
Rússia, Chernogolovka

S. Shapoval

Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences

Email: shapoval@iptm.ru
Rússia, Chernogolovka

Bibliografia

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2. Fig. 1. Experimental setup with plasma discharge generation under ECR conditions: f = 2.45 GHz, Br = 875 Gs. To control the energy of positively charged ions, an RF voltage with a controlled amplitude is applied to the substrate holder (Si, GaAs or Al2O3 plate). A gas ring is used to organize a uniform distribution of the trimethylgallium and trimethylaluminum molecule flow over the sapphire substrate surface during the epitaxial deposition of GaN and AlxGa1-xN layers.

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3. Fig. 2. Distribution of the magnetic field on the reactor axis depending on the distance to the edge of the energy input window. In the experiments, the region Z = [5, 6] cm was used to ensure the formation of a homogeneous plasma mode.

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4. Fig. 3. Dependence of the plasma probe saturation current on the magnetic field strength in the “shelf” interval (see Fig. 2). Pf = 500 W, Pref = 50 W, nitrogen pressure 1 mTorr. When rebuilding the magnetic field to determine the dependence of the probe saturation current on the magnetic field, the coil currents were changed proportionally in order to maintain the field strength distribution. The reflected power Pref was maintained at 50 W by an automatic tuner.

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5. Fig. 4. Dependences of the ion saturation current of the Jion probe on the absorbed microwave power Pabs = (Pf–Pref) in N2 plasma. Nitrogen pressure p = 1 mTorr.

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6. Fig. 5. Dependence of the saturation current of the Jion plasma probe on the nitrogen pressure in the reactor. Incident power Pf = 500 W. Reflected power Pref = 50 W. Magnetic field on the reactor axis B = Br /2 = 438 Gs.

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7. Fig. 6. Dependence of plasma density on nitrogen pressure in the reactor. Incident power Pf = 500 W. Reflected power Pref = 50 W, Magnetic field on the reactor axis B = Br = 875 Gs. The electron gas concentration was calculated from microwave interferometry data.

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