Plasma Parameters and Si/SiO2 Etching Kinetics in Mixtures of Fluorocarbon Gases with Argon and Helium

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Resumo

The comparative study of plasma electro-physical parameters, fluorine atom densities as well as Si and SiO2 etching kinetics in CF4 + Ar/He, CHF3 + Ar/He and C4F8 + Ar/He gas mixtures with variable (0–45% He) initial compositions was carried out. It was found that the substitution of Ar by He at constant fraction of fluorocarbon component a) disturbs electrons-related plasma characteristics; b) exhibits the very weal effect in the ion bombardment intensity; and c) causes a decrease in both Si and SiO2 etching rates together with the fluorine atom density. It was shown that the dominant etching mechanism is the heterogeneous chemical reaction while the effective reaction probability either increases (in CF4 plasma) or keeps the nearly constant value (in CHF3 and C4F8 plasmas) with increasing fraction of He in a feed gas. The mechanism providing above effects were suggested.

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Sobre autores

A. Efremov

Molecular Electronics Research Institute (MERI)

Autor responsável pela correspondência
Email: amefremov@mail.ru
Rússia, Zelenograd

V. Betelin

SRISA RAS

Email: amefremov@mail.ru
Rússia, Moscow

K. Kwon

Korea University

Email: amefremov@mail.ru
República da Coreia, Chochiwon

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2. Fig. 1. Electron temperature (a), ion current density (b), negative displacement on the treated surface (c), and the parameter tracking the change in ion bombardment intensity (d) in CF4 + Ar/He, CHF3 + Ar/He, and C4F8 + Ar/He mixtures as a function of helium content in the plasma gas.

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3. Fig. 2. Emission intensities of analytical lines (a, b, c) and fluorine atom concentrations (d) in CF4 + + Ar/He, CHF3 + Ar/He, and C4F8 + Ar/He mixtures as a function of helium content in the plasma gas.

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4. Fig. 3. Etching rate (a, c, e) and effective probability of heterogeneous chemical reaction (b, d, f) in CF4 + Ar/He, CHF3 + Ar/He, and C4F8 + Ar/He mixtures as a function of helium content in the plasma gas. The dotted lines in Figs. a), c), and e) represent the chemical component of the etching rate.

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