| Issue |
Title |
File |
| Vol 53, No 6 (2024) |
Plasma Parameters and Si/SiO2 Etching Kinetics in Mixtures of Fluorocarbon Gases with Argon and Helium |
(Rus)
|
|
Efremov A.M., Betelin V.B., Kwon K.H.
|
| Vol 53, No 6 (2024) |
Conductivity Study of Carbon Nanotubes Deposited on Iridium Silicon-Silicide Substrate |
(Rus)
|
|
Kerimov E.A.
|
| Vol 53, No 5 (2024) |
Producing of graphene: deposition and annealing |
(Rus)
|
|
Shustin Е.G.
|
| Vol 53, No 4 (2024) |
Methodology of Production of Photo-Sensitive Elements on Ptsi Basis |
(Rus)
|
|
Kerimov E.A.
|
| Vol 53, No 4 (2024) |
Al Islands on Si(111): Growth Temperature, Morphology and Strain |
(Rus)
|
|
Lomov A.A., Zakharov D.M., Tarasov M.A., Chekushkin A.M., Tatarintsev A.A., Vasiliev A.L.
|
| Vol 53, No 4 (2024) |
Plasmochemical and Reactive Ion Etching of Gallium Arsenide in Difluorodichloromethane with Helium |
(Rus)
|
|
Murin D.B., Chesnokov I.A., Gogulev I.A., Anokhin A.L., Moloskin A.E.
|
| Vol 53, No 2 (2024) |
Ripple of a DC/DC converter based on SEPIC topology |
(Rus)
|
|
Bityukov V.K., Lavrenov A.I.
|
| Vol 53, No 2 (2024) |
Influence of nickel impurities on the operational parameters of a silicon solar cell |
(Rus)
|
|
Kenzhaev Z.T., Zikrillaev N.F., Odzhaev V.B., Ismailov K.A., Prosolovich V.S., Zikrillaev K.F., Koveshnikov S.V.
|
| Vol 53, No 2 (2024) |
Temporary changes in current flow mechanisms in erbium-doped porous silicon |
(Rus)
|
|
Khamzin E.K., Uslin D.A.
|
| Vol 53, No 1 (2024) |
Features of Electroforming and Functioning of Memristors Based on Open TiN–SiO2–Mo Sandwich Structures |
(Rus)
|
|
Gorlachev E.S., Mordvintsev V.M., Kudryavtsev S.E.
|
| Vol 53, No 1 (2024) |
Molecular Layering of an Additive Layer of Silicon Dioxide on Anodized Tantalum and Niobium Oxides |
(Rus)
|
|
Ezhovskii Y.K., Mikhailovskii S.V.
|
| Vol 53, No 1 (2024) |
Parameters and Composition of Plasma in a Mixture of CF4 + H2 + Ar: Effect of the CF4/H2 Ratio |
(Rus)
|
|
Miakonkikh A.V., Kuzmenko V.O., Efremov A.M., Rudenko K.V.
|
| Vol 53, No 1 (2024) |
Interconnects Materials for Integrated Circuit Technology Below 5 Nm Node |
(Rus)
|
|
Rogozhin A.E., Glaz O.G.
|
| Vol 53, No 1 (2024) |
Application of Spectral Ellipsometry for Dielectric, Metal and Semiconductor Films in Microelectronics Technology |
(Rus)
|
|
Gaidukasov R.A., Miakonkikh A.V.
|
| Vol 52, No 5 (2023) |
Effect of the Material of Electrodes on Electroformation and Properties of Memristors Based on Open Metal–SiO2–Metal Sandwich Structures |
(Rus)
|
|
Mordvintsev V.M., Kudryavtsev S.E., Naumov V.V., Gorlachev E.S.
|
| Vol 52, No 4 (2023) |
Effect of Magnetron Sputtering Power on ITO Film Deposition at Room Temperature |
(Rus)
|
|
Saenko A.V., Vakulov Z.E., Klimin V.S., Bilyk G.E., Malyukov S.P.
|
| Vol 52, No 4 (2023) |
Mechanisms of the Redistribution of Carbon Contamination in Films Formed by Atomic Layer Deposition |
(Rus)
|
|
Fadeev A.V., Myakon’kikh A.V., Smirnova E.A., Simakin S.G., Rudenko K.V.
|
| Vol 52, No 3 (2023) |
Hydrogen Plasma under Conditions of Electron-Cyclotron Resonance in Microelectronics Technology |
(Rus)
|
|
Polushkin E.A., Nefed’ev S.V., Koval’chuk A.V., Soltanovich O.A., Shapoval S.Y.
|
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