| Edição |
Título |
Arquivo |
| Volume 53, Nº 6 (2024) |
III-nitride HEMT Heterostructures with an Ultrathin AlN Barrier: Fabrication and Experimental Application |
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Gusev A., Sultanov A., Ryzhuk R., Nevolina T., Tsunvaza D., Safaraliev G., Kargin N.
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| Volume 53, Nº 3 (2024) |
Carrier Scattering Analysis in AlN/GaN HEMT Heterostructures with an Ultrathin AlN Barrier |
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Gusev A., Sultanov A., Katkov A., Ryndya S., Siglovaya N., Klochkov A., Ryzhuk R., Kargin N., Borisenko D.
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| Volume 53, Nº 1 (2024) |
Analysis of Nonlinear Distortions of Dphemt Structures Based on a GaAs/InGaAs Compound with Double-Sided Delta-Doping |
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Golikov O., Kodochigov N., Obolensky S., Puzanov A., Tarasova E., Khazanova S.
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| Volume 53, Nº 4 (2024) |
Approximation of the Absorption Spectrum of Indium Phosphide in the Context of Simulation of the Process of Sensitivity Enhancement |
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Makarenko P., Zolnikov V., Zarevich A., Zalenskaya N., Poluektov A.
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| Volume 53, Nº 6 (2024) |
Tunnel Breakdown Bipolar Transistor |
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Rekhviashvili S., Gaev D.
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| Volume 52, Nº 6 (2023) |
OPTICALLY PUMPED BIPOLAR TRANSISTOR |
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Altudov Y., Gaev D., Pskhu A., Rekhviashvili S.
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| Volume 52, Nº 3 (2023) |
Fast Electrochemical Micropump for Portable Drug Delivery Module |
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Uvarov I., Shlepakov P., Abramychev A., Svetovoy V.
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| Volume 52, Nº 4 (2023) |
Influence of Boundary Conditions on Quantum Magnetotransport in a Thin Film |
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Kuznetsova I., Savenko O., Romanov D.
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| Volume 52, Nº 5 (2023) |
Influence of Hot Carrier Degradation on the Characteristics of a High-Voltage SOI Transistor with a Large Drift Region |
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Novoselov A., Masalskii N.
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| Volume 53, Nº 6 (2024) |
Influence of Manufacture Imperfections and Electrical Noise on Evolution of a Charge Qubit under Optical Control |
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Tsukanov A., Kateev I.
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| Volume 53, Nº 3 (2024) |
Influence of Hydrogen Additive on Electrophysical Parameters and Emission Spectra of Tetrafluoromethane Plasma |
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Murin D., Grazhdyan A., Chesnokov I., Gogulev I.
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| Volume 53, Nº 3 (2024) |
The Effect оf Laser Radiation оn Functional Properties of MOS Structures |
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Rekhviashvili S., Gaev D.
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| Volume 52, Nº 5 (2023) |
Effect of the Material of Electrodes on Electroformation and Properties of Memristors Based on Open Metal–SiO2–Metal Sandwich Structures |
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Mordvintsev V., Kudryavtsev S., Naumov V., Gorlachev E.
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| Volume 52, Nº 4 (2023) |
Effect of Magnetron Sputtering Power on ITO Film Deposition at Room Temperature |
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Saenko A., Vakulov Z., Klimin V., Bilyk G., Malyukov S.
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| Volume 53, Nº 2 (2024) |
Influence of nickel impurities on the operational parameters of a silicon solar cell |
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Kenzhaev Z., Zikrillaev N., Odzhaev V., Ismailov K., Prosolovich V., Zikrillaev K., Koveshnikov S.
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| Volume 52, Nº 4 (2023) |
Influence of Structural Defects on the Electrophysical Parameters of pin-Photodiodes |
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Koval’chuk N., Lastovskii S., Odzhaev V., Petlitskii A., Prosolovich V., Shestovsky D., Yavid V., Yankovskii Y.
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| Volume 52, Nº 6 (2023) |
ВНИМАНИЮ АВТОРОВ |
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| Volume 53, Nº 2 (2024) |
Temporary changes in current flow mechanisms in erbium-doped porous silicon |
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Khamzin E., Uslin D.
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| Volume 52, Nº 5 (2023) |
Patterns of the Formation of Mobile Localized Magnetic Configurations and Technology for Manufacturing Structures for the Implementation of Magnetic Memory Elements |
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Prokaznikov A., Paporkov V., Chirikov V., Evseeva N.
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| Volume 52, Nº 3 (2023) |
Recording the Polarization State of a Photon in the Correlated Electronic States of an Array of Quantum Dots |
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Tsukanov A., Kateev I.
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| Volume 52, Nº 5 (2023) |
Protective Freely Hanging Films for Projection Lithography Installations in the Extreme UV Range |
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Zuev S., Lopatin A., Luchin V., Salashchenko N., Tsybin N., Chkhalo N.
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| Volume 52, Nº 6 (2023) |
PROBE AND SPECTRAL DIAGNOSTICS OF PLASMA GAS ENVIRONMENT: BCl3-Cl2 |
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Murin D., Chesnokov I., Gogulev I., Grishkov A.
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| Volume 52, Nº 2 (2023) |
SEM Measurements of the Dimensions of Relief Structures in the Technological Process of Manufacturing Microcircuits |
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Novikov Y., Filippov M.
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| Volume 52, Nº 1 (2023) |
Искусственный интеллект никогда не заменит полностью человека |
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Абрамов И.
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| Volume 52, Nº 2 (2023) |
Investigation of the Possibility of Optimizing the Interaction of NV Centers and Photons by Changing the Shape of Microresonators |
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Tsukanov A., Kateev I.
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| Volume 53, Nº 1 (2024) |
Research of Memristor Effect in Crossbar Architecture for Neuromorphic Artificial Intelligence Systems |
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Polyakova V., Saenko A., Kots I., Kovalev A.
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| Volume 52, Nº 2 (2023) |
Investigation of the Optical Properties of Ultrathin Films Based on Metal Silicide |
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Kerimov E.
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| Volume 53, Nº 6 (2024) |
Conductivity Study of Carbon Nanotubes Deposited on Iridium Silicon-Silicide Substrate |
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Kerimov E.
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| Volume 52, Nº 4 (2023) |
Study of the Sensor Properties of Ordered ZnO Nanorod Arrays for the Detection of UV Radiation |
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Evstafieva M., Knyazev M., Korepanov V., Red’kin A., Roschupkin D., Yakimov E.
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| Volume 53, Nº 5 (2024) |
Investigation of ways to synthesize concurrent error-detection circuits based on boolean signals correction using uniform separable codes |
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Efanov D., Yelina E.
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| Volume 52, Nº 1 (2023) |
Study of Photodetectors with Schottky Barriers Based on the IrSi–Si Contact |
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Kerimov E.
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| Volume 53, Nº 4 (2024) |
Study of the Photovoltaic Parameters of Inorganic Solar Cells Based on Cu2O and CuO |
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Saenko A., Bilyk G., Smirnov V.
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| Volume 52, Nº 4 (2023) |
Study of the Sensitive Region of a MOS Transistor to the Effects of Secondary Particles Arising from Ionizing Radiation |
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Glushko A., Morozov S., Chistyakov M.
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| Volume 53, Nº 5 (2024) |
Electron cyclotron resonance plasma studies using the second cyclotron harmonic resonance |
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Kovalchuk А., Shapoval S.
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| Volume 53, Nº 4 (2024) |
CNOT Quantum Gate Based on Spatial Photonic Qubits Under Resonant Electro-Optical Control |
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Tsukanov A., Kateev I.
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| Volume 53, Nº 3 (2024) |
Kinetics of electromigration mass transfer in micro- and nanoelectronics interface elements depending on the strength of thin-film junctions |
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Makhviladze T., Sarychev M.
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| Volume 53, Nº 3 (2024) |
A comprehensive study of nonuniformity properties of the LiCoO2 thin-film cathode fabricated by RF sputtering |
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Kurbatov S., Rudy A., Naumov V., Mironenko A., Savenko O., Smirnova M., Mazaletsky L., Pukhov D.
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| Volume 52, Nº 5 (2023) |
A Computer Investigation of the Effect of High-Resistance Layer Inhomogeneities on Resistive Switching in a Bismuth Selenide Microcrystal Structure |
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Sirotkin V.
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| Volume 52, Nº 1 (2023) |
Контактно-транспортные и автоэмиссионные свойства низкоразмерных 2D углеродных гетероструктур |
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Яфаров Р., Шабунин Н.
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| Volume 52, Nº 1 (2023) |
Controlling Silicon Etching Parameters in RF CHF3 Plasma by Optical Emission Spectroscopy |
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Murin D., Chesnokov I., Pivovarenok S., Efremov A.
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| Volume 52, Nº 4 (2023) |
Concentration of Fluorine Atoms and Kinetics of Reactive-Ion Etching of Silicon in CF4 + O2, CHF3 + O2, and C4F8 + O2 Mixtures |
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Efremov A., Bobylev A., Kwon K.
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| Volume 53, Nº 6 (2024) |
A Brief Overview of the Typology of Neurons and Analysis of Using Memristor Crossbars |
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Tokarev A., Khorin I.
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| Volume 53, Nº 5 (2024) |
Mathematical modeling of a microprocessor liquid cooling system |
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Andreev А., Semenov A.
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| Volume 53, Nº 1 (2024) |
Interconnects Materials for Integrated Circuit Technology Below 5 Nm Node |
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Rogozhin A., Glaz O.
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| Volume 53, Nº 4 (2024) |
Methodology of Production of Photo-Sensitive Elements on Ptsi Basis |
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Kerimov E.
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| Volume 52, Nº 4 (2023) |
Mechanisms of the Redistribution of Carbon Contamination in Films Formed by Atomic Layer Deposition |
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Fadeev A., Myakon’kikh A., Smirnova E., Simakin S., Rudenko K.
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| Volume 53, Nº 5 (2024) |
Electron transport and field electron emission mechanisms in 2D noncrystalline hetero structures with quantum barrier |
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Krasnikov G., Bokarev V., Teplov G., Yafarov R.
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| Volume 53, Nº 4 (2024) |
Al Islands on Si(111): Growth Temperature, Morphology and Strain |
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Lomov A., Zakharov D., Tarasov M., Chekushkin A., Tatarintsev A., Vasiliev A.
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| Volume 52, Nº 4 (2023) |
Multilevel Memristive Structures Based on YBa2Cu3O7–δ Epitaxial Films |
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Tulina N., Rossolenko A., Borisenko I., Ivanov A.
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| Volume 52, Nº 3 (2023) |
Simulation of the Adsorption and Diffusion of Lithium Atoms on Defective Graphene for a Li-Ion Battery |
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Asadov M., Mammadova S., Huseynova S., Mustafaeva S., Lukichev V.
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| Volume 52, Nº 6 (2023) |
Simulation of vertical ballistic quantum-barrier field-effect transistor based on undoped AlxGa1–xAs quantum nanowire |
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Pozdnyakov D., Borzdov A., Borzdov V.
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| Volume 52, Nº 5 (2023) |
Simulation of the Effect of Lattice Defects on the Work of Separating Joined Materials |
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Makhviladze T., Sarychev M.
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| Volume 52, Nº 1 (2023) |
Simulation of Supercell Defect Structure and Transfer Phenomena in TlInTe2 |
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Asadov M., Mustafaeva S., Guseinova S., Lukichev V.
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| Volume 53, Nº 2 (2024) |
Modeling the diffusion of atoms in multicomponent semiconductors in a disordered state |
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Asadov S.
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| Volume 53, Nº 3 (2024) |
Simulation of silicon conical field effect GAA nanotransistors with stack SiO2/HfO2 dielectric of gate |
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Masalsky N.
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| Volume 52, Nº 4 (2023) |
Simulation of Silicon FETs with a Fully Enclosed Gate with a High-k Gate Dielectric |
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Masalskii N.
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| Volume 53, Nº 6 (2024) |
Simulation of Memristive Crossbar Array Electrical Behavior in Neuromorphic Electronic Blocks |
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Dudkin A., Ryndin E., Andreeva N.
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| Volume 52, Nº 3 (2023) |
Simulation of a System of Nanoantennas Located in a TSV Channel as a System for Receiving and Transmitting Data |
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Serov D., Khorin I.
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| Volume 53, Nº 6 (2024) |
Modeling of Structural Properties and Transport Phenomena in Doped Multicomponent 2D Semiconductors |
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Asadov S., Mustafaeva S., Mammadov A., Lukichev V.
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| Volume 53, Nº 1 (2024) |
Modeling of Physical-Chemical and Electronic Properties of Lithium-Containing 4H—SiC and Binary Phases of the Si—C–Li System |
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Asadov M., Huseynova S., Mustafaeva S., Mammadova S., Lukichev V.
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| Volume 53, Nº 1 (2024) |
Modeling of the Electronic Properties of M-Doped Supercells (М = Zr, Nb) with a Monoclinic Structure For Lithium-Ion Batteries |
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Asadov M., Mammadova S., Mustafaeva S., Huseynova S., Lukichev V.
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| Volume 53, Nº 1 (2024) |
Molecular Layering of an Additive Layer of Silicon Dioxide on Anodized Tantalum and Niobium Oxides |
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Ezhovskii Y., Mikhailovskii S.
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| Volume 52, Nº 3 (2023) |
Surface Morphology and Photoluminescence Spectra of Pseudomorphic {InGaAs/GaAs} Superlattices on GaAs (100), (110), and (111)A Substrates |
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Klimov E., Pushkarev S., Klochkov A., Mozhaeva M.
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| Volume 52, Nº 6 (2023) |
MEMS SWITCH BASED ON CANTILEVER WITH INCREASED CONTACT FORCE |
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Belozerov I., Uvarov I.
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| Volume 53, Nº 5 (2024) |
Nanophotonic beam-splitter based on quantum dots with förster coupling |
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Tsukanov А., Kateev I.
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| Volume 52, Nº 5 (2023) |
Neuromorphic Systems: Devices, Architecture, and Algorithms |
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Fetisenkova K., Rogozhin A.
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| Volume 53, Nº 5 (2024) |
New concept for the development of high-performance X-ray lithography |
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Chkhalo N.
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| Volume 53, Nº 2 (2024) |
The new approach of a simulation low dose rate radiation effects in bipolar integrated circuits |
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Chumakov A.
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| Volume 52, Nº 5 (2023) |
The Influence of Small F2, H2, and HF Additives on the Concentration of Active Particles in Tetrafluoromethane Plasma |
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Efremov A., Smirnov S., Betelin V.
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| Volume 52, Nº 4 (2023) |
Single Event Displacement Effects in a VLSI |
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Chumakov A.
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| Volume 52, Nº 2 (2023) |
Oxide Memristors for ReRAM: Approaches, Characteristics, and Structures |
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Isaev A., Permyakova O., Rogozhin A.
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| Volume 53, Nº 1 (2024) |
Features of Electroforming and Functioning of Memristors Based on Open TiN–SiO2–Mo Sandwich Structures |
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Gorlachev E., Mordvintsev V., Kudryavtsev S.
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| Volume 52, Nº 1 (2023) |
Параметры газовой фазы и кинетика реактивно-ионного травления SiO2 в плазме CF4/C4F8/Ar/He |
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Ефремов А., Kwon K.
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| Volume 53, Nº 1 (2024) |
Parameters and Composition of Plasma in a Mixture of CF4 + H2 + Ar: Effect of the CF4/H2 Ratio |
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Miakonkikh A., Kuzmenko V., Efremov A., Rudenko K.
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| Volume 52, Nº 2 (2023) |
Plasma Parameters and Kinetics of Reactive Ion Etching of SiO2 and Si3N4 in an HBr/Cl2/Ar Mixture |
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Efremov A., Betelin V., Kwon K.
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| Volume 53, Nº 6 (2024) |
Plasma Parameters and Si/SiO2 Etching Kinetics in Mixtures of Fluorocarbon Gases with Argon and Helium |
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Efremov A., Betelin V., Kwon K.
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| Volume 53, Nº 1 (2024) |
Electron Transport in a Bipolar Transistor with a Superlattice in the Emitter |
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Golikov O., Zabavichev I., Ivanov A., Obolensky S., Obolenskaya E., Paveliev D., Potekhin A., Puzanov A., Tarasova E., Khazanova S.
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| Volume 52, Nº 3 (2023) |
Hydrogen Plasma under Conditions of Electron-Cyclotron Resonance in Microelectronics Technology |
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Polushkin E., Nefed’ev S., Koval’chuk A., Soltanovich O., Shapoval S.
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| Volume 53, Nº 4 (2024) |
Plasmochemical and Reactive Ion Etching of Gallium Arsenide in Difluorodichloromethane with Helium |
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Murin D., Chesnokov I., Gogulev I., Anokhin A., Moloskin A.
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| Volume 53, Nº 5 (2024) |
Producing of graphene: deposition and annealing |
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Shustin Е.
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| Volume 52, Nº 3 (2023) |
Precise Tomography of Qudits |
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Bogdanov Y., Bogdanova N., Kuznetsov Y., Koksharov K., Lukichev V.
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| Volume 53, Nº 2 (2024) |
Application of the finite element method for calculating the surface acoustic wave parameters and devices |
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Koigerov A.
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| Volume 53, Nº 1 (2024) |
Application of Spectral Ellipsometry for Dielectric, Metal and Semiconductor Films in Microelectronics Technology |
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Gaidukasov R., Miakonkikh A.
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| Volume 52, Nº 6 (2023) |
Design of integrated voltage multipliers using standard CMOS technologies |
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Sinyukin A., Konoplev B., Kovalev A.
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| Volume 52, Nº 6 (2023) |
Prototypes of devices for heterogeneous hybrid semiconductor electronics with an embedded biomolecular domain |
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Baranov M., Karseeva E., Tsybin O.
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| Volume 53, Nº 2 (2024) |
Ripple of a DC/DC converter based on SEPIC topology |
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Bityukov V., Lavrenov A.
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| Volume 53, Nº 5 (2024) |
Development of an imagery representation apparatus for information representation in neyromorphic devices |
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Simonov N.
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| Volume 52, Nº 1 (2023) |
Разработка методики построения нелинейной модели метаморфного 0.15 мкм МHEMT InAlAs/InGaAs транзистора |
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Локотко В., Васильевский И., Каргин Н.
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| Volume 52, Nº 3 (2023) |
Design of a Nonlinear Model of a Pseudomorphic 0.15 μm рHEMT AlGaAs/InGaAs/GaAs Transistor |
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Tsunvaza D., Ryzhuk R., Vasil’evskii I., Kargin N., Klokov V.
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| Volume 53, Nº 3 (2024) |
Development of the Ge-MDST instrument structure with an induced p-type channel |
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Alyabina N., Arkhipova E., Buzynin Y., Denisov S., Zdoroveishchev A., Titova A., Chalkov V., Shengurov V.
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| Volume 52, Nº 1 (2023) |
Calculation of the Electric Field Strength and Current Density Inside a Thin Metal Layer, Taking into Account the Skin Effect |
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Zavitaev E., Rusakov O., Chukhleb E.
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| Volume 52, Nº 6 (2023) |
Performance calculation for a MEMS switch with «floating» electrode |
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Morozov M., Uvarov I.
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| Volume 52, Nº 2 (2023) |
Cross Sections of Scattering Processes in Electron-Beam Lithography |
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Rogozhin A., Sidorov F.
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| Volume 53, Nº 5 (2024) |
Parameters matching of the thermoelectric system parameters for cooling heat-loaded electronics elements |
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Vasil’ev Е.
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| Volume 53, Nº 6 (2024) |
Gas Phase Composition and Fluorine Atom Kinetics in SF6 Plasma |
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Myakonkikh A., Kuzmenko V., Efremov A., Rudenko K.
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| Volume 53, Nº 3 (2024) |
The structure and formation of non-volatile memory cells of Superflash |
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Abdullaev D., Bobrova E., Milovanov R.
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| Volume 53, Nº 1 (2024) |
Structuring of the Surface of Thin Carbon Films During Activation by Microsecond Current Pulses |
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Nefedov D., Shabunin N., Bratashov D.
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| Volume 53, Nº 2 (2024) |
Structural features and electrical properties of si(al) thermal migration channels for high-voltage photovoltaic converters |
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Lomov A., Seredin B., Martyushov S., Tatarintsev A., Popov V., Malibashev A.
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| Volume 53, Nº 5 (2024) |
Temperature dependences of the breakdown voltage of a high-voltage LDMOS transistor |
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Novoselov А., Gusev М., Masalsky N.
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| Volume 53, Nº 3 (2024) |
Thermal modelling and layout optimization of GaN half-bridge IC with integrated drivers and power HEMTs |
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Kagadey V., Kodorova I., Polyntsev E.
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